Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
AssigneeWestern Digital Technologies, Inc.
InventorsAlan Kalitsov, Derek Stewart, Bhagwati Prasad
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Abstract
A magnetoelectric memory device includes a magnetic tunnel junction located between a first electrode and a second electrode. The magnetic tunnel junction includes a reference layer, a nonmagnetic tunnel barrier layer, a free layer, and a dielectric capping layer. At least one layer that provides voltage-controlled magnetic anisotropy is provided within the magnetic tunnel junction, which may include a pair of nonmagnetic metal dust layers located on, or within, the free layer, or a two-dimensional metal compound layer including a compound of a nonmagnetic metallic element and a nonmetallic element.
Claims20
A magnetoelectric memory device, comprising:
- a first electrode;
- a second electrode;
- a magnetic tunnel junction located between the first electrode and the second electrode, the magnetic tunnel junction comprising, along a direction from the first electrode toward the second electrode, a first reference layer, a nonmagnetic tunnel barrier layer, a first nonmagnetic metal dust layer, a free layer including a first component free layer and a second component free layer that are spaced from each other by a second nonmagnetic metal dust layer;
- and
- a dielectric capping layer located between the magnetic tunnel junction and the second electrode.
Dependencies are inferred from the claim text.