Semiconductor storage device and method for manufacturing semiconductor storage device

A semiconductor storage device comprising:

• a plurality of first wiring layers stacked along a first direction;
• a first pillar including a first semiconductor layer and extending through the plurality of first wiring layers in the first direction;
• a second wiring layer disposed above the first pillar in the first direction and extending along a second direction perpendicular to the first direction;
• a semiconductor-containing layer including:
• a first portion disposed on an upper end of the first pillar in the first direction,
• a second portion contacting the first portion and formed alongside the second wiring layer, and
• a third portion contacting an upper end of the second portion and extending along a third direction perpendicular to the first direction and crossing the second direction;
• a first insulating layer between each of the first and second portions of the semiconductor-containing layer and the second wiring layer;
• and
• a first conductor electrically connected to an upper surface of the third portion of the semiconductor-containing layer and extending along the first direction, wherein
• a peripheral length of the upper surface of the third portion is larger than a peripheral length of an upper surface of the first conductor, and
• at least an upper surface of the third portion contains a metal.

A semiconductor storage device comprising:

• a plurality of first wiring layers stacked along a first direction;
• a first pillar including a first semiconductor layer and extending through the plurality of first wiring layers in the first direction;
• a second wiring layer disposed above the first pillar in the first direction and extending along a second direction perpendicular to the first direction;
• a semiconductor-containing layer including:
• a first portion disposed on an upper end of the first pillar in the first direction,
• a second portion contacting the first portion and formed alongside the second wiring layer, and
• a third portion contacting an upper end of the second portion and extending along a third direction perpendicular to the first direction and crossing the second direction;
• a first insulating layer between each of the first and second portions of the semiconductor-containing layer and the second wiring layer;
• a second pillar extending along the first direction through the first wiring layers and
• a third wiring layer formed above the second pillar and extending along the second direction, wherein
• the semiconductor-containing layer further includes:
• a fourth portion disposed on an upper end of the second pillar in the first direction, and
• a fifth portion contacting the third and fourth portions and extending along the third wiring layer between the third and fourth portions, and
• at least an upper surface of the third portion contains a metal.