Semiconductor storage device

Abstract

According to one embodiment, a semiconductor storage device includes a stacked structure in which a plurality of conductive layers is stacked in a stacking direction via an insulating layer, a plurality of pillars extending in the stacking direction in the stacked structure and including a memory cell formed at an intersection between at least a part of the plurality of conductive layers and at least a part of the plurality of pillars, a plurality of first contacts arranged in the stacked structure, each of the first contacts reaching a different depth in the stacked structure and being connected to a conductive layer in a different layer among the plurality of conductive layers, and a plurality of second contacts arranged in the stacked structure separately from the plurality of first contacts, each of the second contacts being connected to a conductive layer identical to the conductive layer to which corresponding one of the plurality of first contacts is connected.

Dependencies are inferred from the claim text.