Integrated assemblies and methods of forming integrated assemblies

An integrated assembly, comprising:

• first conductive structures extending along a first direction;
• spaced-apart upwardly-opening container-shapes over the first conductive structures;
• each of the container-shapes comprises two-dimensional-material and having a first sidewall region, a second sidewall region, and a bottom region extending from the first sidewall region to the second sidewall region;
• each of the first and second sidewall regions including a lower source/drain region, an upper source/drain region, and a channel region between the upper and lower source/drain regions;
• the lower source/drain regions being electrically coupled with the first conductive structures;
• second conductive structures extending along a second direction which crosses the first direction;
• the second conductive structures having gate regions operatively adjacent the channel regions, each gate region comprising a single structure operatively adjacent a single channel region;
• and
• storage elements electrically coupled with the upper source/drain regions.

A method of forming an integrated assembly, comprising:

• forming a construction having first conductive structures extending along a first direction and spaced from one another along a second direction;
• intervening first insulative regions being between the spaced-apart first conductive structures;
• forming second conductive structures over the first conductive structures and extending along a second direction which crosses the first direction;
• the second conductive structures being spaced from the construction by intervening second insulative regions;
• the second conductive structures being arranged in pairs;
• each paired arrangement of the second conductive structures having an inner region between the conductive structures of the paired arrangement, having a first outer region on an opposing side of one of the conductive structures of the paired arrangement from the inner region, and having a second outer region on an opposing side of the other of the conductive structures of the paired arrangement from the inner region;
• forming insulative material over the outer regions of the paired arrangements;
• trenches extending through the insulative material and through the inner regions of the paired arrangements;
• each of the trenches having a first sidewall surface and an opposing second sidewall surface along a cross-section;
• forming dielectric material along the first and second sidewall surfaces of the trenches to narrow the trenches;
• forming two-dimensional-material to extend substantially conformally along the insulative material and the dielectric material;
• the two-dimensional-material being arranged as strips extending along the first direction;
• the strips of the two-dimensional-material being directly over the first conductive structures;
• and
• patterning the strips into segments;
• each of the segments including an upwardly-opening container-shape which extends into an associated one of the trenches;
• the container-shape including a pair of sidewall regions, and including a bottom region extending between the sidewall regions;
• the sidewall regions including upper source/drain regions, lower source/drain regions, and channel regions between the upper and lower source/drain regions.