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US 11,889,679 B2Granted
Semiconductor devices and methods of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSungyeon Ryu, Eunjung Kim
Life of this patent
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Abstract
Disclosed are a semiconductor device and a method of fabricating the same. In the semiconductor device, a supporting pattern may be used to fix upper portions of active patterns, when a gap-filling process is performed to fill a region between active patterns, and thus, it may be possible to prevent or reduce the likelihood of the active patterns from being bent or fallen. Thus, it may be possible to reduce failure of the semiconductor device and/or to improve reliability of the semiconductor device.
Claims16
A semiconductor device, comprising:
- a substrate having a plurality of trenches;
- an insulating pattern fully covering bottom surfaces, top surfaces, and inner sides surfaces of the plurality of trenches;
- and
- active patterns defined by the plurality of trenches,
- wherein the active patterns are spaced apart from each other in a first direction and are parallel to each other, the first direction parallel to a top surface of the substrate, and
- at least one of opposite topmost ends of the active patterns has a stepwise portion, wherein
- the stepwise portion comprises of a bottom surface and a side surface, and the bottom surface is parallel to a top surface of the active pattern,
- the insulating pattern is in continuous contact with the bottom surfaces, top surfaces, and inner side surfaces of the plurality of trenches and the bottom surface and side surface of the stepwise portion,
- the insulating pattern covers a top surface of the active patterns and a top surface of the plurality of trenches, and
- the insulating pattern has a planar top surface.
7 more elements
A semiconductor device, comprising:
- a substrate having a plurality of trenches, the plurality of trenches including first trenches and second trenches having widths different from each other;
- active patterns defined by the plurality of trenches;
- an oxide layer covering an inner surface of each of the first trenches and the second trenches;
- and
- a nitride layer filling the second trenches,
- wherein at least one of opposite topmost ends of the active patterns has a stepwise portion, wherein
- the stepwise portion comprises of a bottom surface and a side surface, and the bottom surface is parallel to a top surface of the active pattern,
- the oxide layer is interposed between inner side surfaces of the second trenches and a side surface of the nitride layer,
- the oxide layer is interposed between bottom surfaces of the second trenches and a bottom surface of the nitride layer,
- the oxide layer and the nitride layer conform an insulating pattern,
- the insulating pattern fully covers bottom surfaces, top surfaces, and inner side surfaces of the plurality of trenches such that is in continuous contact with the bottom surfaces, top surfaces, and inner side surfaces of the plurality of trenches and the bottom surface and side surface of the stepwise portion, and
- the insulating pattern covers has a planar top surface that covers a top surface of the active patterns and a top surface of the plurality of trenches.
9 more elements
Dependencies are inferred from the claim text.