Semiconductor device and a method of manufacturing a semiconductor device
AssigneeSK hynix Inc.
InventorNam Jae Lee
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Abstract
A method of manufacturing a semiconductor device according to an embodiment of the present disclosure may include forming a first sacrificial layer including a first portion and a second portion having a thickness thicker than a thickness of the first portion, forming a stack including first material layers and second material layers alternating with each other on the first sacrificial layer, forming a channel structure passing through the stack and extending to the first portion, forming a slit passing through the stack and extending to the second portion, removing the first sacrificial layer through the slit to form a first opening, and forming a second source layer connected to the channel structure in the first opening.
Claims13
A semiconductor device comprising:
- a first source layer comprising a first portion and a second portion having a thickness thicker than a thickness of the first portion;
- bit lines;
- a stack positioned between the first source layer and the bit lines, wherein the stack comprises conductive layers and insulating layers alternating with each other;
- a channel structure passing through the stack and extending to the first portion;
- and
- a slit passing through the stack and extending to the second portion.
A semiconductor device comprising:
- a first source layer comprising a first portion and a second portion having a thickness thicker than a thickness of the first portion;
- a stack including conductive layers and insulating layers alternating with each other;
- a channel layer passing through the stack and contacting the first portion;
- and
- a source contact structure passing through the stack and contacting the second portion.
Dependencies are inferred from the claim text.