Method of manufacturing a computer device

A method comprising:

• forming computer circuitry in a first silicon substrate, the first silicon substrate having a self-supporting depth;
• forming a plurality of distributed capacitance units in a second silicon substrate;
• after forming computer circuitry in a first silicon substrate and forming a plurality of distributed capacitance units in a second silicon substrate, bonding a first surface of the first silicon substrate to a second surface of the second silicon substrate to create a stacked structure;
• after bonding, thinning the second silicon substrate to a depth smaller than a depth of the first silicon substrate;
• and
• disposing a plurality of supply voltage connector terminals on a third surface of the second substrate, wherein the third surface and the second surface are on opposite sides of the second substrate.

A method for forming a semiconductor die, the method comprising:

• forming computer circuitry in a first semiconductor substrate, the first semiconductor substrate having a self-supporting depth;
• forming a plurality of distributed capacitance units in a second semiconductor substrate;
• bonding a first surface of the first semiconductor substrate to a second surface of the second semiconductor substrate to create a stacked structure;
• forming a plurality of vias extending depthwise in the stacked structure between the first surface and the second surface;
• and
• after bonding and forming the plurality of vias, thinning the second semiconductor substrate to a depth smaller than a depth of the first semiconductor substrate.