US 11,889,215 B2Granted

Light detector

AssigneePanasonic Intellectual Property Management Co., Ltd.

InventorsTatsuya Kabe, Hideyuki Arai, Hisashi Aikawa, Yuki Sugiura, Akito Inoue, Mitsuyoshi Mori, Kentaro Nakanishi, Yusuke Sakata

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Abstract

A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.

Claims21

Dependent claims

A light detector in which a light receiving portion having one or more avalanche photodiodes and a peripheral circuit portion exchanging a signal with the light receiving portion are provided on a first principal surface of a first conductive type semiconductor substrate, comprising at least:

a back electrode provided on a second principal surface of the semiconductor substrate facing the first principal surface and configured to apply a predetermined voltage to the semiconductor substrate;
and
a first conductive type first separation portion provided between the light receiving portion and the peripheral circuit portion with a predetermined interval from each of the light receiving portion and the peripheral circuit portion in a direction parallel with the first principal surface,
wherein each avalanche photodiode has at least
a second conductive type first region provided to extend inward of the semiconductor substrate from the first principal surface, and
a first conductive type second region provided in contact with the first region in a direction crossing the first principal surface, and
the peripheral circuit portion has at least
a first conductive type first well provided to extend inward of the semiconductor substrate from the first principal surface,
a first transistor provided at the first well, and
a second conductive type third well provided to surround side and bottom portions of the first well.

7 more elements

A light detector in which a light receiving portion having one or more avalanche photodiodes and one or more pixel circuit portions and a peripheral circuit portion exchanging a signal with the light receiving portion are provided on a first principal surface of a first conductive type semiconductor substrate, comprising at least:

a back electrode provided on a second principal surface of the semiconductor substrate facing the first principal surface and configured to apply a predetermined voltage to the semiconductor substrate;
and
a first conductive type first separation portion provided between the light receiving portion and the peripheral circuit portion with a predetermined interval from each of the light receiving portion and the peripheral circuit portion in a direction parallel with the first principal surface,
wherein each avalanche photodiode has at least
a second conductive type first region provided to extend inward of the semiconductor substrate from the first principal surface, and
a first conductive type second region provided in contact with the first region in a direction crossing the first principal surface,
the peripheral circuit portion has at least
a first conductive type first well provided to extend inward of the semiconductor substrate from the first principal surface,
a first transistor provided at the first well, and
a second conductive type third well provided to surround side and bottom portions of the first well, and
each pixel circuit portion
is provided with a predetermined interval from each avalanche photodiode in the direction parallel with the first principal surface,
has at least a second conductive type fourth well and a second transistor provided at the fourth well, and
has a first conductive type second separation portion between the avalanche photodiode and the pixel circuit portion adjacent to each other with a predetermined interval from each of the avalanche photodiode and the pixel circuit portion in the direction parallel with the first principal surface.

11 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/486,495Filed 27 Sep 2021 · continuation
Priority: JP 2019-06329828 Mar 2019
Published: US 2022/0014701 A113 Jan 2022
Granted: 30 Jan 2024
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H04N 25/75
Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors: circuitry for providing, modifying or processing…
H04N 25/766
Addressed sensors, e.g. MOS or CMOS sensors: comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving,…
H10F 30/225
The devices having only one potential barrier, e.g. photodiodes: the potential barrier working in avalanche mode, e.g. avalanche photodiodes
H10F 39/18
Image sensors: complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors