Tuning capacitance to enhance FET stack voltage withstand

A radio frequency (RF) switch comprising a stack of series coupled transistors arranged between a first endnode and a second endnode from a first endnode transistor in the stack to a second endnode transistor in the stack, wherein

• a plurality of transistors of the stack have a width depending on a location of the plurality of transistors in the stack, and
• a width of a second transistor of the plurality of transistors is set at a predetermined amount to be smaller than a width of a first transistor of the plurality of transistors.

A voltage distribution-balanced transistor arrangement for radio frequency (RF) operation, comprising:

• a stack of series coupled field emission (FET) transistors comprising a first transistor having a first width and a second transistor having a second width smaller than the first width by at least a predetermined amount to voltage balance the transistor arrangement.