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US 11,888,332 B2Granted
Half-bridge circuit using monolithic flip-chip GaN power devices
AssigneeNavitas Semiconductor Limited
InventorsDaniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
Life of this patent
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Abstract
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
Claims20
An electronic device, comprising:
- a monolithic semiconductor substrate including at least one layer of gallium-nitride disposed on a layer of silicon;
- a plurality of flip-chip bumps;
- an under-voltage lock-out circuit formed on the monolithic semiconductor substrate;
- a low-side circuit formed on the monolithic semiconductor substrate, the low-side circuit comprising:
- a low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain;
- and
- a low-side transistor driver, arranged to control a conductivity state of the low-side transistor according to a first input signal;
- and
- a high-side circuit formed on the monolithic semiconductor substrate, the high-side circuit comprising:
- a high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain;
- and
- a high-side transistor driver arranged to control a conductivity state of the high-side transistor according to a second input signal;
- wherein the low-side drain is electrically connected to the high-side source to form a half-bridge circuit.
10 more elements
An electronic device comprising:
- a gallium-nitride based monolithic semiconductor substrate;
- a plurality of flip-chip bumps coupled to the monolithic semiconductor substrate;
- an under-voltage lock-out circuit formed on the monolithic semiconductor substrate;
- a low-side transistor disposed on the monolithic semiconductor substrate, the low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain wherein the low-side transistor is controlled by a low-side transistor driver circuit arranged to control a conductivity state of the low-side transistor in response to receiving a first input signal;
- and
- a high-side transistor disposed on the monolithic semiconductor substrate, the high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain wherein the high-side transistor is controlled by a high-side transistor driver circuit arranged to control a conductivity state of the high-side transistor in response to receiving a second input signal;
- wherein the low-side drain is electrically connected to the high-side source forming a switch-node of a half-bridge circuit.
4 more elements
A method of forming an electronic device, the method comprising:
- forming a monolithic semiconductor substrate comprising gallium-nitride;
- coupling a plurality of flip-chip bumps to the monolithic semiconductor substrate;
- forming an under-voltage lock-out circuit formed on the monolithic semiconductor substrate;
- forming a low-side transistor within the monolithic semiconductor substrate, the low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain wherein the low-side transistor is controlled by a low-side transistor driver circuit arranged to control a conductivity state of the low-side transistor in response to receiving a first input signal;
- forming a high-side transistor within the monolithic semiconductor substrate, the high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain wherein the high-side transistor is controlled by a high-side transistor driver circuit arranged to control a conductivity state of the high-side transistor in response to receiving a second input signal;
- and
- electrically connecting the low-side drain to the high-side source to form a switch-node of a half-bridge circuit.
4 more elements
Dependencies are inferred from the claim text.