Flip-chip LED structure and fabrication method

A flip-chip light emitting diode (LED) comprising:

• a sapphire substrate having a lateral vertical edge;
• an epitaxial layer over the sapphire substrate, wherein the epitaxial layer comprises:
• a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure;
• and
• an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the lateral vertical edge of the sapphire substrate by the barrier structure;
• and wherein the insulating layer is a distributed Bragg reflective layer, which is formed over the epitaxial layer prior to forming at least one opening structure.