Semiconductor light emitting device and light emitting device package

A semiconductor light emitting device comprising:

• a substrate structure having an upper surface, the upper surface having a first region, a second region, and a third region;
• a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, sequentially stacked on the third region of the substrate structure;
• a first electrode layer disposed between the substrate structure and the light emitting structure, and connected to the first conductivity-type semiconductor layer, and the first electrode layer having a first electrode extension extending onto the first region;
• a second electrode layer disposed between the first electrode layer and the light emitting structure, connected to the second conductivity-type semiconductor layer, and having a second electrode extension, extending onto the second region, wherein the second electrode extension has an upper surface higher than an upper surface of the first electrode extension;
• a leveling electrode layer disposed on the upper surface of the first electrode extension, and having an upper surface that reduces a level difference between the upper surface of the first electrode extension and the upper surface of the second electrode extension;
• an interlayer insulating layer disposed between the first electrode layer and the second electrode layer, and extending onto the first region and the second region, the interlayer insulating layer having an opening that exposes the first electrode extension and the leveling electrode layer;
• and
• a first pad and a second pad, respectively disposed on the upper surface of the leveling electrode layer and the upper surface of the second electrode extension.

A light emitting device package comprising:

• a package substrate having a heat dissipation lead frame, a first lead frame, and a second lead frame;
• and
• a semiconductor light emitting device including:
• a substrate structure having an upper surface having a first region, a second region, and a third region, and a lower surface contacting the heat dissipation lead frame,
• a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, sequentially stacked on the third region of the substrate structure, and
• a first pad and a second pad, respectively disposed on the first region and the second region, and electrically connected to the first lead frame and the second lead frame,
• wherein the semiconductor light emitting device further comprises:
• a first electrode layer disposed between the substrate structure and the light emitting structure, connected to the first conductivity-type semiconductor layer, and having a first electrode extension, extending onto the first region;
• a second electrode layer disposed between the first electrode layer and the light emitting structure, connected to the second conductivity-type semiconductor layer, and having a second electrode extension extending onto the second region, wherein the second electrode extension has the second pad disposed thereon and has an upper surface higher than an upper surface of the first electrode extension;
• a leveling electrode layer disposed on the upper surface of the first electrode extension, having the first pad disposed thereon, and having an upper surface that reduces a level difference between the upper surface of the first electrode extension and the upper surface of the second electrode extension;
• and
• an interlayer insulating layer disposed between the first electrode layer and the second electrode layer, extending onto the first region and the second region, and having an opening that exposes the first electrode extension and the leveling electrode layer.