Semiconductor light-emitting element and method of producing semiconductor light-emitting element

A semiconductor light-emitting element comprising a light-emitting layer having a layered structure in which a first III-V compound semiconductor layer and a second III-V compound semiconductor layer having different composition ratios are stacked repeatedly, wherein

• group III element in the first III-V compound semiconductor layer and the second III-V compound semiconductor layer is one type or two or more types selected from the group consisting of Al, Ga, and In, and group V element in the first III-V compound semiconductor layer and the second III-V compound semiconductor layer is one type or two or more types selected from the group consisting of As, Sb, and P,
• the first III-V compound semiconductor layer and the second III-V compound semiconductor layer each contain three or more types of elements selected from the group III element and the group V element, and
• a composition wavelength difference between a composition wavelength of the first III-V compound semiconductor layer and a composition wavelength of the second III-V compound semiconductor layer is 50 nm or less, and a ratio of a lattice constant difference between a lattice constant of the first III-V compound semiconductor layer and a lattice constant of the second III-V compound semiconductor layer is not less than 0.05% and not more than 0.60%.