Light emitting element and method of manufacturing light emitting element

A light emitting element comprising:

• an n-side nitride semiconductor layer;
• an active layer disposed on the n-side nitride semiconductor layer and comprising a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers, wherein the active layer is configured to emit ultraviolet light;
• and
• a p-side nitride semiconductor layer disposed on the active layer, wherein:
• at least one of the plurality of barrier layers comprises, successively from an n-side nitride semiconductor layer side:
• a first barrier layer comprising Al and Ga, and
• a second barrier layer disposed in contact with the first barrier layer, comprising Al, Ga, and In, and having a smaller band gap energy than the first barrier layer,
• at least one of the plurality of well layers is disposed in contact with the second barrier layer and has a smaller band gap energy than the second barrier layer,
• one or more of the plurality of well layers comprises In, and
• an In content of the one or more well layers among the plurality of well layers is identical with an In content of the second barrier layer.