Transistor, method of manufacturing transistor, and display device using the same
AssigneeMikuni Electron Corporation
InventorSakae Tanaka
Life of this patent
Estimating the term…
Abstract
A transistor in an embodiment includes an oxide semiconductor layer on a substrate, the oxide semiconductor layer including a first region and a second region, a first gate electrode including a region overlapping the oxide semiconductor layer, the first gate electrode being arranged on a surface of the oxide semiconductor layer opposite to the substrate, a first insulating layer between the first gate electrode and the oxide semiconductor layer, and a first oxide conductive layer and a second oxide conductive layer between the oxide semiconductor layer and the substrate, the first oxide conductive layer and the second oxide conductive layer each including a region in contact with the oxide semiconductor layer.
Claims20
A transistor comprising:
- an oxide semiconductor layer on a substrate, the oxide semiconductor layer including a first layer and a second layer;
- a first gate electrode including a region overlapping the oxide semiconductor layer;
- a first insulating layer between the first gate electrode and the oxide semiconductor layer;
- and
- a first oxide conductive layer and a second oxide conductive layer each including a region in contact with the oxide semiconductor layer,
- wherein the first layer of the oxide semiconductor layer and the second layer of the oxide semiconductor layer include a region overlapping each other, the first layer of the oxide semiconductor layer is arranged closer to the top surface of the substrate than the second layer of the oxide semiconductor layer, and
- wherein a band gap of the second layer of the oxide semiconductor layer is wider than a band gap of the first layer of the oxide semiconductor layer.
A transistor comprising:
- an oxide semiconductor layer on a substrate, the oxide semiconductor layer having a first surface on a side of the substrate and a second surface opposite to the first surface;
- a first gate electrode including a region overlapping the oxide semiconductor layer;
- a first insulating layer between the first gate electrode and the oxide semiconductor layer;
- and
- a first oxide conductive layer and a second oxide conductive layer each including a region in contact with the first surface of the oxide semiconductor layer;
- wherein a band gap of the second layer of the oxide semiconductor layer is wider than a band gap of the first layer of the oxide semiconductor layer.
Dependencies are inferred from the claim text.