Gallium nitride-on-silicon devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJun-De Jin, Chan-Hong Chern
Life of this patent
Estimating the term…
Abstract
A gallium nitride-on-silicon structure is disclosed in which the two-dimensional electron gas (2DEG) layer is a discontinuous layer that includes at least two 2DEG segments. Each 2DEG segment is separated from another 2DEG segment by a gap. The 2DEG layer can be depleted by a p-doped gallium nitride layer that is disposed over a portion of an aluminum gallium nitride layer. Additionally or alternatively, a trench may be formed in the structure through the 2DEG layer to produce a gap in the 2DEG layer. An electrical component is positioned over at least a portion of a gap.
Claims20
An electrical component device, comprising:
- a buffer layer disposed over a frontside surface of a substrate;
- a first layer of gallium nitride disposed over the buffer layer;
- a second layer of aluminum gallium nitride disposed over the first layer, wherein a layer of a two-dimensional electron gas (2DEG) is disposed at an interface between the first layer and the second layer;
- a trench formed from a backside surface of the substrate through the substrate, through the buffer layer, through the first layer, and through the layer of 2DEG, wherein the trench creates a gap in the layer of 2DEG to produce a first 2DEG segment and a second 2DEG segment;
- and
- an electrical component positioned over the second layer and over at least a portion of the gap between the first and the second 2DEG segments.
An electronic device, comprising:
- a first electrical component;
- and
- an electrical component device comprising:
- a buffer layer disposed over a frontside surface of a substrate;
- a first layer of gallium nitride disposed over the buffer layer;
- a second layer of aluminum gallium nitride disposed over the first layer, wherein a two-dimensional electron gas (2DEG) layer is disposed at an interface between the first layer and the second layer;
- a trench formed from a backside surface of the substrate through the substrate, through the buffer layer, through the first layer, and through the 2DEG layer, wherein the trench creates a gap in the 2DEG layer to produce a first 2DEG segment and a second 2DEG segment;
- and
- a second electrical component positioned over the second layer and over at least a portion of the gap between the first and the second 2DEG segments, wherein the second electrical component is operably connected to the first electrical component.
A method of fabricating an electrical component device, comprising:
- forming a layer of gallium nitride over a frontside of a substrate;
- forming a layer of aluminum gallium nitride over the first layer, wherein a two-dimensional electron gas (2DEG) layer is produced at an interface between the first layer and the second layer;
- forming a trench at a backside surface of the substrate through the substrate, through the first layer, and through the 2DEG layer, wherein the trench creates a gap in the 2DEG layer to produce a first 2DEG segment and a second 2DEG segment;
- forming a dielectric material in the trench;
- and
- disposing an electrical component over the second layer and over at least a portion of the gap.
Dependencies are inferred from the claim text.