Semiconductor device and method for manufacturing the same

A nitride-based semiconductor device, comprising:

• a substrate;
• a buffer disposed over the substrate;
• a first nitride-based semiconductor layer disposed over the buffer;
• a shield layer disposed between the buffer and the first nitride-based semiconductor layer and comprising a first isolation compound that has a bandgap greater than a bandgap of the first nitride-based semiconductor layer, the first isolation compound at least comprising a group III element and oxygen;
• a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer;
• and
• a pair of source/drain (S/D) electrodes and a gate electrode disposed over the second nitride-based semiconductor layer, wherein the gate electrode is present between the S/D electrodes, and vertical projections of the S/D electrodes and the gate electrode on the buffer are entirely within a vertical projection of the shield layer on the buffer.

A method for manufacturing a semiconductor device, comprising:

• forming a buffer over a substrate;
• forming a shield layer over a buffer to form an interface with the buffer structure, wherein the shield layer comprises an isolation compound which is made of at least one two-dimensional material which comprising at least one metal element;
• forming a first nitride-based semiconductor layer disposed over the shield layer and having a bandgap less than a bandgap of the isolation compound;
• forming a second nitride-based semiconductor layer on the first nitride-based semiconductor layer, wherein the second nitride-based semiconductor layer has a bandgap less than the bandgap of the isolation compound and greater than the bandgap of the first nitride-based semiconductor layer;
• forming a pair of source/drain (S/D) electrodes over the second nitride-based semiconductor layer;
• and
• forming a gate electrode over the second nitride-based semiconductor layer and between the S/D electrodes.