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US 11,888,051 B2Granted
Structures for a high-electron-mobility transistor and related methods
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsJiacheng Lei, Lawrence Selvaraj Susai, Joseph James Jerry
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Abstract
Structures for a high-electron-mobility transistor and methods of forming a structure for a high-electron-mobility transistor. The high-electron-mobility transistor has a first semiconductor layer, a second semiconductor layer adjoining the first semiconductor layer along an interface, a gate electrode, and a source/drain region. An insulator region is provided in the first semiconductor layer and the second semiconductor layer. The insulator region extends through the interface at a location laterally between the gate electrode and the source/drain region.
Claims19
A structure comprising:
- a high-electron-mobility transistor including a substrate having an upper surface that faces upwards in a first direction perpendicular to the upper surface, a first semiconductor layer, a second semiconductor layer adjoining the first semiconductor layer along an interface, a first trench and a second trench that are adjacently located in the first semiconductor layer and the second semiconductor layer, a gate window in the first semiconductor layer, a gate electrode located in the first trench, the second trench, and the gate window, a first insulator region in the first semiconductor layer and the second semiconductor layer, a second insulator region in the first semiconductor layer and the second semiconductor layer, and a source/drain region, the gate window connecting the first trench to the second trench, the first semiconductor layer comprising a first compound semiconductor material, the second semiconductor layer comprising a second compound semiconductor material different in composition from the first compound semiconductor material, the first insulator region and the second insulator region extending through the interface, the first insulator region laterally positioned between an end of the first trench and the source/drain region, and the second insulator region laterally positioned between an end of the second trench and the source/drain region, and
- wherein a portion of the first insulator region extends below a lowest extent of a first bottom-most surface of the first trench in the first direction, and a portion of the second insulator region extends below a lowest extent of a second bottom-most surface of the second trench in the first direction.
A method comprising:
- forming a first semiconductor layer and a second semiconductor layer adjoining the first semiconductor layer along an interface, wherein the first semiconductor layer comprises a first compound semiconductor material, and the second semiconductor layer comprises a second compound semiconductor material different in composition from the first compound semiconductor material;
- forming a first trench located in the first semiconductor layer and the second semiconductor layer;
- forming a second trench located in the first semiconductor layer and the second semiconductor layer, wherein the second trench is adjacent to the first trench;
- forming a gate window in the first semiconductor layer, wherein the gate window connects the first trench to the second trench;
- forming a source/drain region of a high-electron-mobility transistor;
- forming a first insulator region of the high-electron-mobility transistor in the first semiconductor layer and the second semiconductor layer, wherein the first insulator region is laterally positioned between an end of the first trench and the source/drain region;
- forming a second insulator region of the high-electron-mobility transistor in the first semiconductor layer and the second semiconductor layer, wherein the second insulator region is laterally positioned between an end of the second trench and the source/drain region;
- and
- forming a gate electrode of the high-electron-mobility transistor, wherein the gate electrode is located in the first trench, the second trench, and the gate window,
- wherein the high-electron-mobility transistor includes a substrate having an upper surface that faces upwards in a first direction perpendicular to the upper surface, the first insulator region and the second insulator region each extend through the interface, a portion of the first insulator region extends below a lowest extent of a first bottom-most surface of the first trench in the first direction, and a portion of the second insulator region extends below a lowest extent of a second bottom-most surface of the second trench in the first direction.
7 more elements
Dependencies are inferred from the claim text.