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US 11,888,046 B2Granted
Epitaxial fin structures of finFET having an epitaxial buffer region and an epitaxial capping region
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsueh-Chang Sung, Kun-Mu Li
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Abstract
A fin structure on a substrate is disclosed. The fin structure can comprises a first epitaxial region and a second epitaxial region separated by a dielectric region, a merged epitaxial region on the first epitaxial region and the second epitaxial region, an epitaxial buffer region on a top surface of the merged epitaxial region, and an epitaxial capping region on the buffer epitaxial region and side surfaces of the merged epitaxial region.
Claims20
A semiconductor device, comprising:
- a substrate;
- and
- a fin structure on the substrate, comprising:
- a first epitaxial region and a second epitaxial region separated by a dielectric region;
- a merged epitaxial region on the first epitaxial region and the second epitaxial region, wherein a top surface of the merged epitaxial region is substantially parallel to the substrate;
- an epitaxial buffer region on the top surface of the merged epitaxial region, wherein a length of a horizontal interface between the epitaxial buffer region and the merged epitaxial region is greater than a horizontal length of the dielectric region;
- and
- an epitaxial capping region on the epitaxial buffer region and side surfaces of the merged epitaxial region.
5 more elements
A semiconductor device, comprising:
- a substrate;
- a first fin structure, a second fin structure, a third fin structure, and a fourth fin structure on the substrate;
- a merged epitaxial region over the first and second fin structures;
- a first unmerged epitaxial region and a second unmerged epitaxial region over the third and fourth fin structures, respectively;
- an epitaxial buffer region over a top surface of the merged epitaxial region, wherein the top surface is substantially parallel to the substrate and having a length greater than a spacing between the first and second fin structures, and wherein a height of the merged epitaxial region is greater than heights of the first and second unmerged epitaxial regions;
- a first epitaxial capping region over the epitaxial buffer region and side surfaces of the merged epitaxial region;
- and
- a second epitaxial capping region directly over top and side surfaces of the first and second unmerged epitaxial region, respectively.
5 more elements
A semiconductor device, comprising:
- a substrate;
- a first fin structure and a second fin structure on the substrate, wherein the first and second fin structures are separated by a first spacing;
- a third fin structure and a fourth fin structure on the substrate, wherein the third and fourth fin structures are separated by a second spacing greater than the first spacing;
- a merged epitaxial region over the first and second fin structures;
- unmerged epitaxial regions over the third and fourth fin structures, respectively;
- and
- an epitaxial buffer region over a top surface of the merged epitaxial region and not over top surfaces of the unmerged epitaxial regions, wherein a length of a horizontal interface between the epitaxial buffer region and the merged epitaxial region is greater than the first spacing, and wherein a height of the merged epitaxial region is greater than heights of the unmerged epitaxial regions.
4 more elements
Dependencies are inferred from the claim text.