US 11,888,039 B2 · Integrated circuit device

Abstract

An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.

Claims20

Dependent claims

An integrated circuit device comprising:

a fin-type active region disposed on a substrate and extending in a first horizontal direction;
a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line comprising:
a connection protrusion portion comprising a protrusion top surface at a first vertical level from the substrate, and
a main gate portion comprising a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level;
a gate contact disposed on the gate line and connected to the connection protrusion portion;
a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line;
and
a source/drain contact disposed on the source/drain region, the source/drain contact comprising an uppermost surface at a third vertical level higher than the first vertical level.

5 more elements

An integrated circuit device comprising:

a substrate comprising:
a first region;
and
a second region disposed apart from the first region;
a first fin-type active region extending in a first horizontal direction in the first region;
a first gate line extending in a second horizontal direction intersecting the first horizontal direction, in the first fin-type active region, the first gate line comprising a top surface at a first vertical level from the substrate;
a second fin-type active region extending in the first horizontal direction in the second region;
and
a second gate line extending in the second horizontal direction in the second fin-type active region, the second gate line comprising a recess top surface at a second vertical level lower than the first vertical level,
wherein the second gate line further comprises a connection protrusion portion protruding in a vertical direction from the recess top surface, the connection protrusion portion comprising a protrusion top surface at the first vertical level.

7 more elements

An integrated circuit device comprising:

a substrate comprising:
a first device region;
and
a second device region disposed apart from the first device region;
a first fin-type active region extending in a first horizontal direction in the first device region;
a second fin-type active region extending in the first horizontal direction in the second device region;
a first nanosheet stack comprising at least one first nanosheet facing a first fin top surface of the first fin-type active region and disposed apart from the first fin top surface in a vertical direction;
a second nanosheet stack comprising at least one second nanosheet facing a second fin top surface of the second fin-type active region and disposed apart from the second fin top surface in the vertical direction;
a gate line comprising:
a connection protrusion portion extending in a second horizontal direction intersecting the first horizontal direction, in the first device region and the second device region, the connection protrusion portion comprising a protrusion top surface at a first vertical level from the substrate;
a main gate portion comprising a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level;
and
a plurality of sub gate portions connected to the main gate portion as one body and surrounding the first nanosheet stack and the second nanosheet stack;
a gate contact disposed on the gate line and contacting the connection protrusion portion;
a source/drain region disposed on one among the first fin-type active region and the second fin-type active region and disposed adjacent to the gate line;
and
a source/drain contact disposed on the source/drain region, the source/drain contact comprising an uppermost surface at a third vertical level higher than the first vertical level.

14 more elements

Dependencies are inferred from the claim text.

Integrated circuit device

Life of this patent

Integrated circuit device

Life of this patent

Abstract

Claims20