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US 11,888,036 B2Granted
Method for setting a nitrogen concentration of a silicon epitaxial film in manufacturing an epitaxial silicon wafer
AssigneeSumco Corporation
InventorsKazuya Kodani, Toshiaki Ono, Kazuhisa Torigoe
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Abstract
A manufacturing method of an epitaxial silicon wafer includes forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere; and setting the nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film to heat treatment in a nitrogen atmosphere.
Claims5
A manufacturing method of an epitaxial silicon wafer, the method comprising:
- forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere;
- setting a nitrogen concentration at a depth ranging from 80 nm to 200 nm from a surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film through the forming of the epitaxial film to a heat treatment in a nitrogen atmosphere;
- and
- entirely removing the nitride film.
1 more element
Dependencies are inferred from the claim text.