Silicon carbide semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsYasuyuki Kawada, Aki Takigawa
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Abstract
The silicon carbide semiconductor device includes: a silicon carbide layer; a silicon dioxide layer provided above the silicon carbide layer and containing nitrogen; and a transition region arranged between the silicon carbide layer and the silicon dioxide layer, and containing carbon, oxygen, and nitrogen, wherein the maximum nitrogen concentration in the transition region is 1.0×1020 cm−3 or higher. The maximum nitrogen concentration in the transition region is five or more times higher than the maximum nitrogen concentration in the silicon dioxide layer.
Claims16
A silicon carbide semiconductor device comprising:
- a silicon carbide layer;
- a silicon dioxide layer provided above the silicon carbide layer and containing nitrogen;
- and
- a transition region arranged between the silicon carbide layer and the silicon dioxide layer, and containing carbon, oxygen, and nitrogen,
- wherein the maximum nitrogen concentration in the transition region is 1.0×1020 cm−3 or higher, and
- wherein the maximum nitrogen concentration in the silicon dioxide layer is higher than the maximum nitrogen concentration in the silicon carbide layer.
A silicon carbide semiconductor device comprising:
- a silicon carbide layer;
- a silicon dioxide layer provided above the silicon carbide layer and containing nitrogen;
- and
- a transition region arranged between the silicon carbide layer and the silicon dioxide layer, and containing carbon, oxygen, and nitrogen,
- wherein the maximum nitrogen concentration in the transition region is 1.0×1020 cm−3 or higher, and
- wherein a concentration of the nitrogen is higher than a concentration of carbon in a lower side of the silicon dioxide layer, and the concentration of the carbon is higher than the concentration of the nitrogen in an upper side of the silicon dioxide layer.
Dependencies are inferred from the claim text.