Compound semiconductor and method for manufacturing same
AssigneeJapan Science and Technology Agency
InventorsHiroshi Fujioka, Kohei Ueno
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Abstract
A nitride compound semiconductor having a low resistivity that is conventionally difficult to be manufactured is provided. Since the nitride compound semiconductor exhibits a high electron mobility, a high-performance semiconductor device may be configured. The present invention may provide, at a high productivity, a group 13 nitride semiconductor of an n-type conductivity that may be formed as a film on a substrate having a large area size and has a mobility of 70 to 140 cm2/(V·s) by a pulsed sputtering method performed in a process atmosphere at room temperature to 700° C.
Claims11
A GaN semiconductor,
- wherein:
- the GaN semiconductor contains Si and does not contain Ge as donor impurities, and
- a combination of two property values of electron concentration and resistivity fulfills numerical value conditions enclosed by four points represented by:
- (a) the electron concentration of 1.8×1020 cm−3 and the resistivity of 0.25×10−3 Ω·cm,
- (b) the electron concentration of 3.6×1020 cm−3 and the resistivity of 0.25×10−3 Ω·cm,
- (c) the electron concentration of 6×1020 cm−3 and the resistivity of 0.15×10−3 Ω·cm, and
- (d) the electron concentration of 3×1020 cm−3 and the resistivity of 0.15×10−3 Ω·cm.
A GaN semiconductor,
- wherein:
- the GaN semiconductor contains Ge and does not contain Si as donor impurities, and
- a combination of two property values of electron concentration and resistivity fulfills numerical value conditions enclosed by four points represented by:
- (a) the electron concentration of 1.8×1020 cm−3 and the resistivity of 0.25×10−3 Ω·cm,
- (b) the electron concentration of 3.6×1020 cm−3 and the resistivity of 0.25×10−3 Ω·cm,
- (c) the electron concentration of 6×1020 cm−3 and the resistivity of 0.15×10−3 Ω·cm, and
- (d) the electron concentration of 3×1020 cm−3 and the resistivity of 0.15×10−3 Ω·cm.
Dependencies are inferred from the claim text.