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US 11,888,019 B2Granted
Ferroelectric devices
AssigneeMicron Technology, Inc.
InventorsMikhail A. Treger, Albert Liao
Life of this patent
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AssigneeMicron Technology, Inc.
InventorsMikhail A. Treger, Albert Liao
Estimating the term…
Some embodiments include a ferroelectric device having a ferroelectric insulative material which includes zinc. Some embodiments include a capacitor having a ferroelectric insulative material between a first electrode and a second electrode. The ferroelectric insulative material includes one or more metal-oxide-containing layers and one or more zinc-containing layers. Some embodiments include a memory array having a first set of first conductive structures and a second set of second conductive structures. The first conductive structures are coupled with driver circuitry, and the second conductive structures are coupled with sensing circuitry. The memory array includes an array of access devices. Each of the access devices is uniquely addressed by one of the first conductive structures in combination with one of the second conductive structures. Ferroelectric capacitors are coupled with the access devices. Each of the ferroelectric capacitors includes ferroelectric insulative material having zinc.
A ferroelectric device comprising a ferroelectric insulative material consisting of one or members of the group consisting of a non-iron, non-hafnium transition metal oxide, zirconium, zirconium oxide, niobium, and niobium oxide, and one or more members of the group consisting of ZnSiO, ZnO and ZnSi, wherein the zinc is present at a concentration of less than or equal to 15 at %.
A capacitor, comprising:
A memory array, comprising:
Dependencies are inferred from the claim text.