Image sensor for high photoelectric conversion efficiency and low dark current
AssigneeSamsung Electronics Co., Ltd.
InventorsSanghyun Jo, Jaeho Lee, Eunkyu Lee, Seongjun Park, Kiyoung Lee, Jinseong Heo
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Abstract
Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.
Claims6
An image sensor comprising:
- a substrate including a conductive substrate;
- a first electrode spaced apart from and above the substrate;
- a plurality of photodetection layers between the first electrode and the substrate and configured to convert incident light into an electrical signal, the plurality of photodetection layers including a semiconductor material;
- an insulating layer between the substrate and a photodetection layer of the plurality of photodetection layers above the substrate;
- a second electrode between the insulating layer and the photodetection layer that is above the insulating layer;
- and
- an interlayer between and separating a pair of photodetection layers of the plurality of photodetection layers and including a metallic or semi-metallic material continuously along a width of the interlayer and having anisotropy in electrical conductivity such that the interlayer has lower electrical conductivity parallel to a thickness of the interlayer.
An image sensor comprising:
- a substrate, the substrate comprising a conductive substrate;
- a first electrode spaced apart from and above the substrate;
- a plurality of photodetection layers between the first electrode and the substrate and configured to convert incident light into an electrical signal, the plurality of photodetection layers including a semiconductor material;
- an interlayer between and separating a pair of photodetection layers of the plurality of photodetection layers and including a metallic or semi-metallic material continuously along a width of the interlayer and having anisotropy in electrical conductivity such that the interlayer has lower electrical conductivity parallel to a thickness of the interlayer;
- and
- an insulating layer between the substrate and a photodetection layer of the plurality of photodetection layers above the substrate, the insulation layer including an opening and a lower one of the pair of photodetection layers of the plurality of photodetection layers extends through the opening to contact the substrate.
Dependencies are inferred from the claim text.