Solid-state image capturing element, solid-state image capturing device, and solid-state image capturing element reading method

A solid-state image capturing device comprising a plurality of solid-state image capturing elements disposed in a matrix,

• each of the solid-state image capturing elements including
• a semiconductor substrate,
• a first photoelectric conversion part provided above the semiconductor substrate and configured to convert light into electric charge, and
• a second photoelectric conversion part provided above the first photoelectric conversion part and configured to convert light into electric charge, wherein
• the first and the second photoelectric conversion parts each have a laminated structure including
• an upper electrode,
• a lower electrode,
• a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and
• an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film, and
• the lower electrode of each of the first and the second photoelectric conversion parts is electrically connected with a common electric charge accumulation part through a common penetration electrode provided in common to the first and the second photoelectric conversion parts and penetrating through the semiconductor substrate, the common electric charge accumulation part being provided in common to the first and the second photoelectric conversion parts in the semiconductor substrate.

A solid-state image capturing element reading method, the solid-state image capturing element including

• a semiconductor substrate,
• a first photoelectric conversion part provided above the semiconductor substrate and configured to convert light into electric charge, and
• a second photoelectric conversion part provided above the first photoelectric conversion part and configured to convert light into electric charge,
• the first and the second photoelectric conversion parts each having a laminated structure including
• an upper electrode,
• a lower electrode,
• a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and
• an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film, and
• the lower electrode of each of the first and the second photoelectric conversion parts being electrically connected with a common electric charge accumulation part through a common penetration electrode provided in common to the first and the second photoelectric conversion parts and penetrating through the semiconductor substrate, the common electric charge accumulation part being provided in common to the first and the second photoelectric conversion parts in the semiconductor substrate,
• the solid-state image capturing element reading method comprising:
• controlling the accumulation electrode of each of the first and the second photoelectric conversion parts to sequentially transfer electric charge accumulated in the photoelectric conversion film of each of the first and the second photoelectric conversion parts to the lower electrode of each of the first and the second photoelectric conversion parts in a temporally sequential manner;
• and
• sequentially accumulating the electric charge sequentially transferred to the lower electrode of each of the first and the second photoelectric conversion parts in the common electric charge accumulation part and sequentially reading the accumulated electric charge.