Imaging device, manufacturing method thereof, and electronic apparatus

An electronic apparatus comprising an imaging device, the imaging device including:

• a Si {111} substrate having a first direction as a thickness direction and extending along a horizontal plane orthogonal to the first direction;
• a photoelectric conversion section provided in the Si {111} substrate;
• a first conductivity type region provided in the Si {111} substrate;
• and
• a light-shielding section including a horizontal light-shielding part and a vertical light-shielding part, the horizontal light-shielding part positioned between the photoelectric conversion section and the first conductivity type region in the first direction and extending along the horizontal plane, the vertical light-shielding part being orthogonal to the horizontal light-shielding part,
• the horizontal light-shielding part comprising an insulating material including:
• a first plane formed along a first crystal plane of the Si {111} substrate being orthogonal to the first direction and represented by a plane index {111}, and
• a second plane formed along a second crystal plane of the Si {111} substrate being inclined relative to the first direction and represented by the plane index {111}.

An imaging device comprising:

• a Si substrate having a first direction as a thickness direction and extending along a horizontal plane orthogonal to the first direction;
• a photoelectric conversion section provided in the Si substrate;
• a first conductivity type region provided in the Si substrate;
• and
• a light-shielding section including a horizontal light-shielding part and a vertical light-shielding part, the horizontal light-shielding part positioned between the photoelectric conversion section and the first conductivity type region in the first direction and extending along the horizontal plane, the vertical light-shielding part being orthogonal to the horizontal light-shielding part;
• the horizontal light-shielding part comprising an insulating material including:
• a first plane formed along a crystal plane being orthogonal to the first direction and having three Si backbonds, and
• a second plane formed along a second crystal plane being inclined relative to the first direction and having three Si backbonds.