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US 11,888,005 B2Granted
Solid-state imaging device, manufacturing method thereof, and camera with alternatively arranged pixel combinations
AssigneeSony Semiconductor Solutions Corporation
InventorsHiroaki Ishiwata, Sanghoon Ha
Life of this patent
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Abstract
A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
Claims20
A light detecting device, comprising:
- a first on-chip lens;
- a second on-chip lens;
- a plurality of photoelectric conversion regions;
- a single photoelectric conversion region;
- a first waveguide disposed between the first on-chip lens and the plurality of photoelectric conversion regions;
- and
- a second waveguide disposed between the second on-chip lens and the single photoelectric conversion region,
- wherein the first on-chip lens has a larger diameter than the second on-chip lens.
5 more elements
Dependencies are inferred from the claim text.