Photodetector
AssigneeNippon Telegraph and Telephone Corporation
InventorKotaro Takeda
Life of this patent
Estimating the term…
Abstract
In a photodetector using GePDs, a photodetector having small change in light sensitivity due to temperature is provided. A photodetector includes a plurality of photodiodes formed on a silicon substrate and having germanium or a germanium compound in a light absorption layer, and two chips of integrated circuits arranged parallel to two sides connected to one corner of the silicon substrate, respectively, the two integrated circuits are connected to photodiodes formed on the silicon substrate, two or more of the photodiodes are arranged equidistantly from the integrated circuit that is parallel to one side connected to the one corner, and the numbers of equidistantly arranged photodiodes are equal, when viewed from the integrated circuits.
Claims16
A photodetector comprising:
- a first group of photodiodes and a second group of photodiodes formed on a silicon substrate and including a germanium layer as a light absorption layer, the first and second groups of photodiodes being an entirety of the photodiodes formed on the silicon substrate, the first group of photodiodes being formed orthogonal to the second group of photodiodes on the silicon substrate;
- and
- two integrated circuits arranged parallel to two sides connected to one corner of the silicon substrate, respectively,
- wherein each of the two integrated circuits is connected to two or more photodiodes of the first and second groups of photodiodes formed on the silicon substrate,
- an integrated circuit of the two integrated circuits is arranged equidistantly from each of the two or more photodiodes, and
- the number of the two or more photodiodes corresponding to each of the two integrated circuits is equal.
A photodetector comprising:
- a first group of photodiodes and a second group of photodiodes formed on a silicon substrate and including a germanium layer as a light absorption layer, the first and second groups of photodiodes being an entirety of the photodiodes formed on the silicon substrate, the first group of photodiodes being formed orthogonal to the second group of photodiodes on the silicon substrate;
- and
- two or more integrated circuits monolithically integrated on the silicon substrate,
- wherein each of the two or more integrated circuits is connected to two or more photodiodes of the first and second groups of photodiodes formed on the silicon substrate,
- an integrated circuit of the two or more integrated circuits is arranged equidistantly from each of the two or more photodiodes, and
- the number of the two or more photodiodes corresponding to each of the two or more integrated circuits is equal.
Dependencies are inferred from the claim text.