Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYu-Rung Hsu
Life of this patent
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Abstract
A method includes etching a substrate to form a semiconductor fin, forming a gate stack on a top surface and sidewalls of the semiconductor fin, and forming a first recess in the semiconductor fin on a side of the gate stack, wherein forming the first recess comprises, performing a first etching process to form a first portion of the first recess, depositing a first dielectric layer on sidewalls of the gate stack and the first portion of the first recess, performing a second etching process to form a second portion of the first recess using the first dielectric layer as a mask, wherein the second portion of the first recess extends under the gate stack, and performing a third etching process to remove the first dielectric layer.
Claims20
A method comprising:
- etching a substrate to form a semiconductor fin;
- forming a gate stack on a top surface and sidewalls of the semiconductor fin;
- and
- forming a first recess in the semiconductor fin on a side of the gate stack, wherein forming the first recess comprises;
- performing a first etching process to form a first portion of the first recess;
- depositing a first dielectric layer on sidewalls of the gate stack and the first portion of the first recess;
- performing a second etching process to form a second portion of the first recess using the first dielectric layer as a mask, wherein the second portion of the first recess extends under the gate stack;
- performing a third etching process to remove the first dielectric layer;
- and
- after performing the third etching process, performing a fourth etching process to form a third portion of the first recess.
A method comprising:
- forming a gate stack on sidewalls and a top surface of a semiconductor fin;
- and
- forming source/drain regions on opposite sides of the gate stack, wherein forming each of the source/drain regions comprises:
- performing a first etching process to etch the semiconductor fin in a vertical direction and form a first source/drain recess;
- performing a second etching process to etch the semiconductor fin in a vertical direction and a horizontal direction to extend the first source/drain recess, wherein the second etching process continues until etchants of the second etching process are exposed to surfaces of the semiconductor fin that are in the (110) family of crystallographic planes;
- and
- epitaxially growing a semiconductor material in the first source/drain recess, wherein the semiconductor material is in physical contact with the surfaces of the semiconductor fin that are in the (110) family of crystallographic planes.
A method comprising:
- forming a fin over a semiconductor substrate;
- forming a gate stack on sidewalls and a top surface of the fin;
- performing a first etching process to form a first recess and a second recess in the fin, the first recess and the second recess being on opposite sides of the gate stack;
- after performing the first etching process, depositing a first dielectric layer on sidewalls of the gate stack, and depositing the first dielectric layer on sidewalls of the fin in the first recess and the second recess;
- after depositing the first dielectric layer, performing a second etching process to extend the first recess and the second recess under the gate stack, wherein after performing the second etching process, a first portion of the fin is disposed between the first recess and the gate stack;
- after performing the second etching process, performing a third etching process to further extend the first recess and the second recess in the fin;
- and
- epitaxially growing a semiconductor material in the first recess and the second recess.
Dependencies are inferred from the claim text.