Semiconductor device and method of fabricating the same
AssigneeFujian Jinhua Integrated Circuit Co., Ltd.
InventorYifei Yan
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Abstract
The present disclosure provides a semiconductor device and a method of fabricating the same, which includes a substrate, an active structure, and a shallow trench isolation. The active structure is disposed in the substrate and includes a first active area, a second active area disposed outside the first active area, and a third area disposed outside the second active area. The shallow trench isolation is disposed in the substrate to surround the active structure. Through the second active area and the third active of the active structure, the structural stability of the semiconductor device may be enhanced to improve the stress around the semiconductor device, thereby preventing from structural collapse or deformation.
Claims9
A semiconductor device, comprising:
- a substrate;
- an active structure, disposed in the substrate, the active structure comprising:
- a first active area, comprising a plurality of active area units being parallel extended along a first direction;
- a second active area, disposed outside the first active area;
- and
- a third active area, disposed outside the second active area and surrounding the second active area, the second active area and the third active area respectively comprising a first edge extending along a second direction and a second edge extending along a third direction, and the first edge directly connected to the second edge, wherein the second direction intersects and is not perpendicular to the first direction, and the second direction is perpendicular to the third direction.
Dependencies are inferred from the claim text.