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US 11,887,961 B2Granted
Semiconductor device, semiconductor arrangement and method for producing the same
AssigneeInfineon Technologies Austria AG
InventorsPaul Frank, Thomas Heinelt, Oliver Schilling, Sven Schmidbauer, Frank Wagner
Life of this patent
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Abstract
A semiconductor device includes a semiconductor wafer or a single semiconductor chip or die, and a layer stack. The layer stack comprises a first layer comprising NiSi, and a second layer comprising NiV, wherein the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.
Claims15
A semiconductor device comprising:
- a semiconductor wafer or a single semiconductor chip or die;
- and
- a layer stack, wherein
- the layer stack comprises a first layer comprising NiSi, and a second layer comprising NiV, wherein the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.
1 more element
A method comprising:
- forming a layer stack on a semiconductor wafer or a single semiconductor chip or die, wherein forming the layer stack comprises
- forming a second layer comprising NiV on the single semiconductor chip or die, and
- forming a first layer comprising NiSi on the second layer such that the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.
Dependencies are inferred from the claim text.