Temperature hierarchy solder bonding
AssigneeInternational Business Machines Corporation
InventorsKatsuyuki Sakuma, Mukta Ghate Farooq
Life of this patent
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Abstract
A semiconductor device and formation thereof. The semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a plurality of pillars interconnecting the first semiconductor structure and the second semiconductor structure. The plurality of pillars include a first solder layer and a second solder layer, wherein the first solder layer has a higher melting point than the second solder layer.
Claims19
A method of interconnecting a first semiconductor structure with a second semiconductor structure, the method comprising:
- forming a plurality of pillars on a surface of the first semiconductor structure, wherein each pillar in the plurality of pillars is formed by:
- depositing a first metal layer onto a surface of the first semiconductor structure;
- depositing a first solder layer onto the first metal layer;
- depositing a second metal layer onto the first solder layer;
- and
- depositing a second solder layer onto the second metal layer inverting the first semiconductor structure having the plurality of pillars formed on the surface of the first semiconductor;
- and
- interconnecting the inverted first semiconductor structure with the second semiconductor structure by attaching the second solder layer of each pillar in the plurality of pillars to a respective bonding pad of a plurality of bonding pads located on a top surface of the second semiconductor structure, wherein the second solder layer of each pillar in the plurality of pillars attached to the respective bonding pad of the plurality of bonding pads located on the top surface of the second semiconductor structure has a lower melting point than a melting point of the first solder layer formed between the first metal layer and the second metal layer of each pillar in the plurality of pillars.
A semiconductor device, comprising:
- a first semiconductor structure;
- a second semiconductor structure located below the first semiconductor structure;
- and
- a plurality of pillars interconnecting the first semiconductor structure and the second semiconductor structure, wherein the plurality of pillars include:
- a first solder layer located between a first metal layer and a second metal layer;
- and
- a second solder layer attached to a bonding pad formed on a surface of the second semiconductor structure, wherein a melting point of the first solder layer located between the first metal layer and the second metal layer is greater than a melting pointing of the second solder layer attached to the bonding pad formed on the surface of the second semiconductor structure.
A pillar structure used to interconnect a first semiconductor structure with a second semiconductor structure, the pillar structure comprising:
- a first solder layer located between a first metal layer and a second metal layer, wherein the first solder layer is a solder elbow;
- and
- a second solder layer formed on the second metal layer, wherein the second solder layer is a solder joint, and further wherein:
- a melting point of the first solder layer located between the first metal layer and the second metal layer is greater than a melting pointing of the second solder layer formed on the second metal layer.
Dependencies are inferred from the claim text.