Semiconductor device encapsulated by molding material attached to redistribution layer

A package structure, comprising:

• a first dielectric layer;
• a first semiconductor device above the first dielectric layer;
• a first through-semiconductor-via (TSV) device above the first dielectric layer, the first TSV device comprising a first semiconductor substrate and a plurality of first TSVs extending through the first semiconductor substrate;
• a second dielectric layer above the first dielectric layer, the first semiconductor device, and the TSV device;
• a second semiconductor device above the second dielectric layer;
• a redistribution line in the second dielectric layer and electrically connected to the second semiconductor device;
• a conductive bump electrically connecting the redistribution line and the TSVs of the TSV device;
• a first molding material molding the first semiconductor device and the TSV device, wherein the first molding material has a top surface not higher than top ends of the plurality of first TSVs;
• and
• a second molding material molding the second semiconductor device.

A package structure, comprising:

• a first dielectric layer;
• a first semiconductor device over the first dielectric layer;
• a first redistribution line in the first dielectric layer;
• a first molding material surrounding the first semiconductor device;
• a conductive ball over the first molding material;
• a second dielectric layer over the conductive ball;
• a second semiconductor device over the second dielectric layer;
• a second redistribution line in the second dielectric layer and electrically connected to the conductive ball;
• a conductive through-via over the second dielectric layer;
• a second molding material surrounding the second semiconductor device and the conductive through-via;
• and
• a buffer layer on a top surface of the first molding material, wherein the conductive ball extends upward through the buffer layer to a position below a bottom surface of the second dielectric layer.