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US 11,887,945 B2Granted
Semiconductor device with isolation and/or protection structures
AssigneeWolfspeed, Inc.
InventorsLei Zhao, Fabian Radulescu
Life of this patent
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Abstract
The present disclosure relates to a semiconductor device with isolation and/or protection structures. A semiconductor device can include a substrate, a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, and an isolation structure formed on the substrate. The isolation structure can be formed on the substrate between the first transistor and the second transistor. The isolation structure can be configured to isolate the first transistor and the second transistor.
Claims26
A packaged Doherty amplifier comprising:
- a substrate of a semiconductor device enclosed in a package;
- a main transistor formed on the substrate;
- a first edge seal structure formed on the substrate and completely surrounding the main transistor;
- a peaking transistor formed on the substrate;
- a second edge seal structure formed on the substrate and completely surrounding the peaking transistor;
- and
- wherein the first and second edge seal structures are configured to protect the respective transistors from chips or cracks, formed during a singulation process, from propagating into the active area of the transistors;
- wherein the main and peaking transistors are monolithically integrated and the substrate containing both transistors and the first and second edge seal structures are packaged into the amplifier;
- and
- wherein the first and second edge seal structures each comprise at least a first metal layer formed continuously on a front side of the substrate, a second metal layer formed on the first metal layer intermittently along its length, and a plurality of through vias connecting the first metal layer to a grounded conductor on a back side of the substrate.
7 more elements
Dependencies are inferred from the claim text.