Semiconductor devices, semiconductor device packages and method for manufacturing the same
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorWen Hung Huang
Life of this patent
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Abstract
A capacitor structure includes a first metal layer, a first metal oxide layer, a second metal oxide layer, a first conductive member, a second conductive member and a metal composite structure. The first metal layer has a first surface and a second surface opposite the first surface. The first metal oxide layer is formed on the first surface of the first metal layer. The second metal oxide layer is formed on the second surface of the first metal layer. The first conductive member penetrates through the capacitor structure and is electrically isolated from the first metal layer. The second conductive member is electrically connected to the first metal layer. The metal composite structure is disposed between the second conductive member and the first metal layer.
Claims16
A capacitor structure, comprising:
- a core layer, having a first surface and a second surface opposite the first surface;
- a first conductive member penetrating through the capacitor structure and substantially separated from the core layer;
- and
- a second conductive member electrically connected to the core layer, wherein the second conductive member penetrates through the capacitor structure,
- wherein the core layer further comprises:
- a first metal oxide layer at the first surface of the core layer;
- and
- a second metal oxide layer at the second surface of the core layer.
A capacitor structure, comprising:
- a core layer, having a first surface and a second surface opposite the first surface;
- a first conductive member penetrating through the capacitor structure and substantially separated from the core layer;
- and
- a second conductive member electrically connected to the core layer, wherein the second conductive member penetrates through the capacitor structure,
- wherein the first conductive member and the second conductive member are separated by the core layer.
A capacitor structure, comprising:
- a core structure having a top surface and a bottom surface opposite the top surface;
- and
- a first conductive member penetrating through and separated from the core structure, wherein the first conductive member comprises a metal layer and a dielectric layer, and wherein the metal layer of the first conductive member surrounds the dielectric layer of the first conductive member, wherein the core structure has a side surface extending from the top surface to the bottom surface of the core structure, and wherein a second conductive member penetrates through the core structure and is in contact with the side surface of the core structure.
Dependencies are inferred from the claim text.