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US 11,887,920 B2Granted
Redistribution layers including reinforcement structures and related semiconductor device packages, systems and methods
AssigneeMicron Technology, Inc.
InventorsHyunsuk Chun, Chan H. Yoo, Tracy N. Tennant
Life of this patent
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Abstract
Embodiments of a redistribution layer structure comprise a low-k dielectric material and incorporating a reinforcement structure proximate and inward of a peripheral edge thereof, the reinforcement structure comprising conductive material electrically isolated from conductive paths through the RDL structure. Semiconductor packages including an embodiment of the RDL structure and methods of fabricating such RDL structures are also disclosed.
Claims17
A redistribution layer (RDL) structure, comprising:
- at least one level of conductive traces between adjacent levels of low-k dielectric material;
- and
- a reinforcement structure comprising first beams extending parallel to and inward of a periphery of the RDL structure, each of the first beams having a first length, and second beams extending perpendicular to the periphery, each of the second beams having a second length, the second length equal to, or greater than, the first length, each of the second beams connected to two of the first beams, the reinforcement structure comprised of a conductive material, the reinforcement structure electrically isolated from the at least one level of conductive traces and extending between a first major surface and a second major surface of the RDL structure;
- wherein the first beams and the second beams define a square-wave pattern when viewed from the first major surface.
1 more element
A redistribution layer (RDL) structure, comprising:
- two or more levels of conductive traces between adjacent levels of low-k dielectric material;
- and
- a reinforcement structure comprising a conductive material, the reinforcement structure electrically isolated from the two or more levels of conductive traces, the reinforcement structure extending between a first major surface and a second major surface of the RDL structure, the reinforcement structure comprising multiple levels of beams, the multiple levels of beams proximate to and inward of a periphery of the RDL structure, the multiple levels of beams comprising:
- a first level including first beams parallel to one another;
- a second level including second beams parallel to one another and perpendicular to the first beams;
- and
- a third level, the second level between the first level and the third level, the third level including third beams extending parallel to and beneath the first beams, the first beams connected to the third beams by column elements.
4 more elements
A semiconductor device package comprising:
- a semiconductor die;
- a redistribution layer (RDL) structure electrically connected on a first major surface thereof to the semiconductor die, the RDL structure comprising:
- one or more levels of conductive traces, at least some of the one or more levels of conductive traces extending laterally beyond a periphery of the semiconductor die;
- contacts electrically connected to the one or more levels of conductive traces defining a pattern for terminal pads on a second major surface of the RDL structure;
- external conductive elements protruding from the terminal pads;
- and
- a reinforcement structure extending between the first major surface of the RDL structure and the second major surface of the RDL structure, the reinforcement structure including mulitples levels of mutually parallel beams, the mutually parallel beams of adjacent levels defining a square-wave pattern extending parallel to and inward of each peripheral edge of the RDL structure, the reinforcement structure comprising a conductive material, and the reinforcement structure electrically isolated from the one or more levels of conductive traces and the contacts.
4 more elements
Dependencies are inferred from the claim text.