Semiconductor devices and methods of manufacturing semiconductor devices

A semiconductor device, comprising:

• a substrate comprising:
• a first side;
• a second side opposite to the first side;
• a conductive structure comprising a lead comprising a lead via, a lead protrusion, and a lead trace;
• and
• a substrate encapsulant, wherein:
• the lead via comprises via lateral sides and a lead via top side, wherein the via lateral sides comprise first concave shapes;
• the lead protrusion comprises a protrusion lateral side and the lead trace comprises a trace lateral side;
• wherein the protrusion lateral side comprises a second concave shape and the trace lateral side comprises a third concave shape;
• the substrate encapsulant covers the via lateral sides at the first side of the substrate but not the protrusion lateral side or the trace lateral side so that the lead protrusion protrudes from the substrate encapsulant at the second side of the substrate;
• the lead trace laterally extends from the lead protrusion over the substrate encapsulant at the second side of the substrate;
• the lead protrusion comprises a lead protrusion bottom side adjacent to the second side of the substrate;
• the lead trace comprises a lead trace bottom side adjacent to the second side of the substrate and substantially coplanar with the lead protrusion bottom side;
• and
• the trace lateral side is laterally separated from the lead via so that at least a portion of the lead trace bottom side is external to and is not overlapped by the lead via top side in a top plan view;
• a semiconductor component adjacent to the first side of the substrate and electrically coupled to the conductive structure, wherein the semiconductor component comprises:
• a first component side distal to the first side of the substrate;
• a second component side proximate to the first side of the substrate;
• and
• lateral component sides extending between the first component side and the second component side to define a footprint of the semiconductor component;
• and
• a body encapsulant encapsulating the first component side and the lateral component sides of the semiconductor component;
• wherein:
• the body encapsulant comprises a body encapsulant top side and a body encapsulant bottom side;
• the substrate encapsulant comprises a substrate encapsulant top side proximate to the first side of the substrate;
• the body encapsulant bottom side contacts the substrate encapsulant top side;
• the conductive structure further comprises:
• a first terminal layer coupled to the lead via at the first side of the substrate;
• and
• a second terminal layer coupled to the lead protrusion and the lead trace at the second side of the substrate;
• the protrusion lateral side comprises a first height where the protrusion lateral side adjoins the substrate encapsulant;
• the trace lateral side comprises a second height where the trace lateral side adjoins the substrate encapsulant;
• the second height is less than the first height;
• the second terminal layer comprises a conformal layer that contacts the protrusion lateral side, the trace lateral side, the lead trace bottom side, and the lead protrusion bottom side without an intervening layer;
• the first terminal layer and the lead via define an internal terminal;
• the second terminal layer, the lead protrusion, and the lead trace define an external terminal;
• and
• the second terminal layer is devoid of the body encapsulant;
• and
• the lead trace is configured to laterally route an electrical signal at the second side of the substrate in either:
• a fan-in electrical signal path where the lead trace is connected to the lead protrusion at a first location outside of the footprint and laterally extends to a second location within the footprint;
• or
• a fan-out electrical signal path where the lead trace is connected to the lead protrusion at a third location inside of the footprint and laterally extends to a fourth location outside of the footprint.