Power semiconductor device, method for manufacturing power semiconductor device, and power conversion apparatus

A method for manufacturing a power semiconductor device, the method comprising the steps of:

• bonding a semiconductor element to a circuit pattern mounted on a heat radiation fin with interposition of an insulating layer;
• bonding the semiconductor element to an internal electrode, and bonding a support portion of the internal electrode to the circuit pattern;
• bonding the heat radiation fin to a case;
• bonding the internal electrode to an external electrode integrally molded with the case;
• wire-bonding and connecting by wiring the semiconductor element to a control terminal integrally molded with the case with a metal wire;
• and
• sealing with resin a region surrounded by the insulating layer, the circuit pattern, and the case.

A method for manufacturing a power semiconductor device, the method comprising the steps of:

• bonding a semiconductor element to a circuit pattern mounted on a heat radiation fin with interposition of an insulating layer, and bonding a support member to the circuit pattern;
• bonding the semiconductor element to an internal electrode, and bonding the support member to the internal electrode;
• bonding the heat radiation fin to a case;
• bonding the internal electrode to an external electrode integrally molded with the case;
• wire-bonding and connecting by wiring the semiconductor element to a control terminal integrally molded with the case with a metal wire;
• and
• sealing with resin a region surrounded by the insulating layer, the circuit pattern, and the case.