Method of monitoring semiconductor process

A method of monitoring a semiconductor process, comprising:

• setting a process parameter to a first condition;
• performing a first process to form a first film layer on a first wafer, wherein the first film layer does not cover a wafer edge region of the first wafer;
• before performing a patterning process, photographing the first wafer having the first film layer by a camera to obtain a first image, wherein the first image comprises a wafer image and a first film image, and the first film image covers an entire center region of the wafer image;
• performing image recognition to the first image to obtain a first data regarding to the wafer and the first film, wherein the first film covers an entire center region of the wafer;
• determining whether a position of the first film layer is offset according to the first data;
• determining whether an equipment malfunction occurs when the position of the first film layer is offset;
• performing a batch automatic equipment tuning to re-adjust the first condition when equipment malfunction does not occur, wherein a factor adjusted and calibrated in the batch automatic equipment tuning includes a robot arm transfer offset;
• and
• performing a manual adjustment to re-adjust the first condition when equipment malfunction occur.