Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYao-Wen Hsu, Ming-Chi Huang, Ying-Liang Chuang
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Abstract
Semiconductor devices and methods which utilize a treatment process of a bottom anti-reflective layer are provided. The treatment process may be a physical treatment process in which material is added in order to fill holes and pores within the material of the bottom anti-reflective layer or else the treatment process may be a chemical treatment process in which a chemical reaction is used to form a protective layer. By treating the bottom anti-reflective layer the diffusion of subsequently applied chemicals is reduced or eliminated, thereby helping to prevent defects that arise from such diffusion.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a first gate layer over a raised semiconductor region;
- forming a hard mask over the first gate layer;
- applying a bottom anti-reflective layer over the hard mask, the bottom anti-reflective layer having a first diffusibility with respect to a first chemical, the bottom anti-reflective layer comprising a polymer with a chromophore group;
- patterning the hard mask through the bottom anti-reflective layer;
- after the patterning the hard mask, reducing the first diffusibility to a second diffusibility with respect to the first chemical, wherein the reducing the first diffusibility to the second diffusibility comprises applying either isopropyl alcohol or hexamethyldisilazane to the bottom anti-reflective layer;
- and
- removing a portion of the first gate layer using the first chemical while the bottom anti-reflective layer is present.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first gate layer over a raised semiconductor region;
- applying a bottom anti-reflective layer over the first gate layer;
- forming a self-aligned monolayer on a top surface and sidewall of the bottom anti-reflective layer;
- and
- applying an etchant to the self-aligned monolayer and the first gate layer, wherein the etchant removes a portion of the first gate layer.
A method of manufacturing a semiconductor device, the method comprising:
- applying a first treatment chemical to a bottom anti-reflective layer, the first treatment chemical comprising either isopropyl alcohol or hexamethyldisilazane;
- and
- after the applying the first treatment chemical, applying an etchant to the bottom anti-reflective layer and a first gate metal layer, the etchant removing an exposed portion of the first gate metal layer.
Dependencies are inferred from the claim text.