Method for forming semiconductor die with die region and seal-ring region

A method for forming a semiconductor die, the method comprising:

• forming a first interlayer dielectric layer on a substrate having a die region and a scribe line region;
• forming a second interlayer dielectric layer on the first interlayer dielectric layer;
• forming a metal pad in the die region and a test pad in the scribe line region, respectively, on the second interlayer dielectric layer;
• forming a passivation dielectric layer on the second interlayer dielectric layer, the metal pad, and the test pad;
• performing a first etching process on the passivation dielectric layer and the first and second interlayer dielectric layers formed on both sides of the test pad using a plasma etching process to expose a surface of the substrate;
• performing a second etching process on the passivation dielectric layer formed on the metal pad and the test pad to expose the metal pad and the test pad;
• forming a bump on the metal pad;
• and
• dicing the substrate while removing the scribe line region using a blade dicing process.

A method of forming a semiconductor device, the method comprising:

• forming an interlayer dielectric layer on a substrate having a semiconductor die region and a scribe line region;
• forming a metal pad in the semiconductor die region and a test pad in the scribe line region, respectively, on the interlayer dielectric layer;
• forming a passivation dielectric layer on the interlayer dielectric layer, the metal pad, and the test pad;
• and
• performing a first etching process on the passivation dielectric layer and the interlayer dielectric layer formed on both sides of the test pad to a predetermined depth using a plasma etching process;
• performing a second etching process on the passivation dielectric layer formed on the metal pad and the test pad to expose the metal pad and the test pad;
• forming a bump on the metal pad;
• and
• dicing the substrate to remove the scribe line region by mechanical sawing.