Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
AssigneeASM IP Holding B.V.
InventorsDieter Pierreux, Bert Jongbloed, Qi Xie, Giuseppe Alessio Verni
Life of this patent
Estimating the term…
Abstract
Disclosed are methods and systems for depositing layers comprising vanadium, nitrogen, and element selected from the list consisting of molybdenum, tantalum, niobium, aluminum, and silicon. The layers are deposited onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.
Claims17
A method for forming a layer on a substrate in a reactor chamber, the method comprising the application of a deposition process comprising
- providing a first precursor to the reactor chamber, the first precursor comprising vanadium;
- providing a second precursor to the reactor chamber, the second precursor comprising an element selected from a list consisting of molybdenum, tantalum, aluminum, and silicon, wherein the second precursor comprises an aluminum alkyl, molybdenum halide, molybdenum oxyhalide, a silane, a chlorosilane, tantalum halide, and/or a metalorganic tantalum compound;
- and
- providing a reactant to the reactor chamber, the reactant comprising nitrogen;
- thus forming a layer on the substrate, the layer comprising the vanadium;
- the layer comprising the element selected from the list consisting of molybdenum, tantalum, aluminum, and silicon;
- and the layer comprising the nitrogen.
A gate-all-around pmos field effect transistor comprising a threshold voltage tuning layer, the threshold voltage tuning layer being formed according to a method for forming a layer on a substrate in a reactor chamber, the method comprising the application of a deposition process comprising:
- providing a first precursor to the reactor chamber, the first precursor comprising vanadium;
- providing a second precursor to the reactor chamber, the second precursor comprising an element selected from a list consisting of molybdenum, tantalum, niobium, aluminum, and silicon;
- and
- providing a reactant to the reactor chamber, the reactant comprising nitrogen;
- thus forming a layer on the substrate, the layer comprising the vanadium;
- the layer comprising the element selected from the list consisting of molybdenum, tantalum, niobium, aluminum, and silicon;
- and the layer comprising the nitrogen.
Dependencies are inferred from the claim text.