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US 11,887,856 B2Granted
Enhanced spatial ALD of metals through controlled precursor mixing
AssigneeApplied Materials, Inc.
InventorsKelvin Chan, Yihong Chen, Jared Ahmad Lee, Kevin Griffin, Srinivas Gandikota, Joseph Yudovsky, Mandyam Sriram
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Abstract
Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.
Claims17
A method comprising:
- exposing a substrate surface to a first process condition, the first process condition comprising a constant flow of a first reactive gas and a pulsed flow of a second reactive gas, the second reactive gas pulsed so that there is less than a full amount of the second reactive gas for CVD;
- purging the substrate surface of the first process condition to remove the first reactive gas and the second reactive gas;
- and
- exposing the substrate surface to a second process condition comprising the second reactive gas.
1 more element
A method comprising:
- exposing a substrate surface to a first process condition comprising a constant flow of a first reactive gas and a second reactive gas, the first reactive gas and the second reactive gas are spontaneously reactive;
- purging the substrate surface of the first processing condition to remove the first reactive gas and the second reactive gas;
- and
- exposing the substrate surface to a second process condition consisting essentially of the second reactive gas,
- wherein the first process condition comprises less than a full amount of the second reactive gas for CVD.
2 more elements
A method comprising:
- exposing a substrate surface to a first process condition in a first process region of a processing chamber, the first process condition comprising a constant flow of a first reactive gas comprising WF6 and a pulsed flow of a second reactive gas consisting essentially of H2, the second reactive gas pulsed so that there is less than a full amount of the second reactive gas for CVD;
- purging the substrate surface of the first processing condition to remove the WF6 and the H2;
- exposing the substrate surface to a second process condition in the second process region, the second process condition consisting essentially of the H2;
- purging the substrate surface of the second processing condition;
- and
- repeating exposure to the first process condition, purge of the substrate surface, and exposure to the second process condition to deposit a film of a predetermined thickness.
3 more elements
Dependencies are inferred from the claim text.