Method of forming transition metal dichalcogenidethin film and method of manufacturing electronic device including the same

A method of forming a thin film of transition metal dichalcogenide, the method comprising:

• providing a substrate in a reaction chamber;
• depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a precursor and is performed at a first temperature,
• the precursor including a transition metal and a chalcogen;
• and
• heat-treating the transition metal dichalcogenide thin film on the substrate at a second temperature under a chalcogen atmosphere, the second temperature being higher than the first temperature, wherein
• the precursor includes a metal oxide, a metal halide, a metal carbonyl compound, or a combination thereof, and
• the heat-treating the transition metal dichalcogenide thin film includes forming the chalcogen atmosphere by providing a chalcogen-containing gas comprising at least one of H2S, H2Se or H2Te.