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US 11,887,847 B2Granted
Methods and precursors for selective deposition of metal films
AssigneeApplied Materials, Inc.
InventorsKurt Fredrickson, Atashi Basu, Mihaela A. Balseanu, Ning Li
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Abstract
Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.
Claims20
A method of selectively depositing a metal film, the method comprising:
- exposing a substrate with a first surface comprising SiO2 and a second surface comprising silicon nitride to a blocking precursor to form a blocked first surface, the blocking precursor comprising a compound of the formula R3Si—X, where each R is independently C1-C4 alkyl and X is a reactive handle;
- exposing the substrate to a metal precursor;
- and
- exposing the substrate to a reagent to react with the metal precursor to form a metal film on the second surface.
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A method of selectively depositing a metal film, the method comprising:
- exposing a substrate with a first surface comprising SiO2 and a second surface comprising silicon nitride to a blocking precursor to form a blocked first surface;
- exposing the substrate to a metal precursor, the metal precursor comprising a compound of the formula M(NR′2)a where each R′ is independently C1-C4 alkyl and a is greater than or equal to one;
- and
- exposing the substrate to a reagent to react with the metal precursor to form a metal film on the second surface.
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Dependencies are inferred from the claim text.