Edge ring and etching apparatus
AssigneeTokyo Electron Limited
InventorsToshifumi Ishida, Yusuke Saitoh
Life of this patent
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Abstract
An edge ring includes a ramp surface of which a height decreases from an outer edge-side portion toward an inner edge-side portion. The edge ring is configured to satisfy the relation of T2/T1>T4/T3. Where, T1 is a thickness of the edge ring, before plasma treatment, at a first position on the ramp surface of the inner edge-side portion, and T2 is a thickness of the edge ring, before plasma treatment, at a second position on the ramp surface of the outer edge-side portion. T3 is a thickness of the edge ring, after plasma treatment, at the first position, and T4 is a thickness of the edge ring, after plasma treatment, at the second position.
Claims6
An edge ring to encircle an etching object supported by a substrate support in a plasma processing chamber, the edge ring comprising:
- an inner edge-side portion toward the innermost circumference of the edge ring, relative to an intermediate line that is equidistant from the innermost circumference and the outermost circumference of the edge ring;
- and
- an outer edge-side portion toward the outermost circumference of the edge ring, relative to the intermediate line,
- wherein the inner edge-side portion and the outer edge-side portion have a ramp surface of which a height decreases from the outer edge-side portion toward the inner edge-side portion,
- wherein the edge ring is configured to satisfy the relation of T2/T1>T4/T3, and wherein
- T1 is a thickness of the edge ring, before plasma treatment, at a first position on the ramp surface of the inner edge-side portion,
- T2 is a thickness of the edge ring, before plasma treatment, at a second position on the ramp surface of the outer edge-side portion,
- T3 is a thickness of the edge ring, after plasma treatment, at the first position, and
- T4 is a thickness of the edge ring, after plasma treatment, at the second position.
An etching apparatus comprising:
- a plasma processing chamber;
- a substrate support provided in the plasma processing chamber;
- an edge ring to encircle an etching object supported by the substrate support, the edge ring including;
- an inner edge-side portion toward the innermost circumference of the edge ring, relative to an intermediate line that is equidistant from the innermost circumference and the outermost circumference of the edge ring;
- and
- an outer edge-side portion toward the outermost circumference of the edge ring, relative to the intermediate line,
- wherein the inner edge-side portion and the outer edge-side portion have a ramp surface of which a height decreases from the outer edge-side portion toward the inner edge-side portion,
- wherein the edge ring is configured to satisfy the relation of T2/T1>T4/T3, and wherein
- T1 is a thickness of the edge ring, before plasma treatment, at a first position on the ramp surface of the inner edge-side portion,
- T2 is a thickness of the edge ring, before plasma treatment, at a second position on the ramp surface of the outer edge-side portion,
- T3 is a thickness of the edge ring, after plasma treatment, at the first position, and
- T4 is a thickness of the edge ring, after plasma treatment, at the second position.
Dependencies are inferred from the claim text.