Plasma processing system and method using radio frequency (RF) and microwave power

A plasma processing system comprising:

• a plasma processing chamber;
• a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the plasma processing chamber;
• a microwave power system coupled to the plasma with microwave power, the microwave power system comprising:
• a conductive spatial uniformity component comprising a plurality of through openings, the conductive spatial uniformity component comprising a major surface configured to couple microwave power to the plasma in the plasma processing chamber;
• a microwave source coupled to a microwave oscillator;
• a controller configured to execute instructions to adjust a spatial uniformity metric of electromagnetic (EM) power supplied to the plasma;
• and
• a depth adjuster component coupled to the plurality of through openings, the depth adjuster component comprising:
• a conductive surface comprising a plurality of protrusions extending into one end of the plurality of through openings, and wherein tips of each of the plurality of protrusions are positioned inside each of the plurality of through openings at a depth from the opposite end;
• and
• a system configured to slide the protrusions along sidewalls of the openings to vary the depth of the openings, the system configured to receive command instructions from the controller to move the plurality of protrusions.

A method for plasma processing of a semiconductor wafer, the method comprising:

• loading the semiconductor wafer in a plasma processing chamber coupled to a radio frequency (RF) source electrode and a microwave power system comprising a conductive spatial uniformity component comprising a plurality of through openings, the conductive spatial uniformity component comprising a major surface coupled to a depth adjuster, a microwave oscillator and a microwave source;
• igniting plasma by coupling RF power from the RF source electrode to gas in the plasma processing chamber;
• coupling microwave power from the microwave power system to a plasma ignited in the plasma processing chamber by coupling the microwave oscillator to the microwave source;
• and
• changing, with the depth adjuster, an unfilled depth of the plurality of through openings to control a combined electromagnetic (EM) power being supplied to the plasma, wherein controlling the combined EM power adjusts a spatial uniformity metric of EM power.