Plasma processing method
AssigneeHitachi High-Tech Corporation
InventorsMamoru Yakushiji, Kenichi Kuwahara, Masaaki Taniyama
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Abstract
Provided is a plasma processing method capable of improving an etching selectivity of a material to be etched with respect to a mask material and reducing a roughness of a side wall of a mask pattern. The plasma processing method of selectively depositing a deposition film on the mask material with respect to the material to be etched includes controlling an etching parameter so that an incubation time of the mask material is shorter than an incubation time of the material to be etched.
Claims8
A plasma processing method of selectively depositing a deposition film on a mask material with respect to a material to be etched, the plasma processing method comprising:
- controlling an etching parameter by performing
- a first step of adjusting a microwave power supply power;
- a second step of adjusting a radio frequency bias power supply power;
- and
- a third step of adjusting at least one of a microwave power supply repetition frequency, a microwave power supply duty ratio, a radio frequency bias power supply repetition frequency, and a radio frequency bias power supply duty ratio so that an incubation time of the mask material is shorter than an incubation time of the material to be etched to cause a deposition rate of the deposition film on the mask material to be higher than a deposition rate of the deposition film on the material to be etched following an end of the incubation time of the deposition film on the mask material, to cause an unevenness in line width to be less than 1.5 nm when the mask material has a width of greater than 2 nm.
Dependencies are inferred from the claim text.