Electron emitting element and method for manufacturing same
AssigneeNational Institute of Advanced Industrial Science and Technology
InventorsKatsuhisa Murakami, Masayoshi Nagao
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Abstract
Provided in the present disclosure is an electron emitting element 10 including a laminated structure in which a first electrode 1, an electron accelerating layer 6 made of an insulation film, a second electrode 3, and a cover film 7 are laminated in that order, in which the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface 5.
Claims15
An electron emitting element comprising:
- a laminated structure in which a first electrode, an electron accelerating layer made of an insulation film, a second electrode, and a cover film are laminated in that order, wherein
- the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and
- the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface thereof,
- wherein the cover film is made of hexagonal boron nitride.
An electron emitting element comprising:
- a laminated structure in which a first electrode, an electron accelerating layer made of an insulation film, a second electrode, and a cover film are laminated in that order, wherein
- the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and
- the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface thereof, wherein the cover film is (i) a film of one or two or more layers selected from MoS2, MoSe2, WS2, WSe2, GaS, and GaSe, or (ii) a film of one or two more layers selected from SiO2, Al2O3, ZrO, HfO2, and TiO2.
A manufacturing method for an electron emitting element comprising:
- a step of forming a first electrode;
- a step of forming a first insulation film, which limits a region of an electron emission surface, on a part of a surface of the first electrode;
- a step of forming an electron accelerating layer which is made of an insulation film and covers the first electrode and the first insulation film;
- and
- a step of forming a cover film, which transmits electrons, on a region of the electron emission surface of the electron accelerating layer,
- wherein the cover film is a hexagonal boron nitride film, and
- the hexagonal boron nitride film which covers the electron accelerating layer is formed in the step of forming the cover film by (i) transferring a hexagonal boron nitride film which is formed on a substrate on the region of the electron emission surface of the electron accelerating layer, or (ii) performing a chemical vapor deposition method using diborane and ammonia, boron trichloride and ammonia, ammonia borane, or borazine as raw materials.
Dependencies are inferred from the claim text.